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Home ELECTRONIC COMPONENTS Transistors General Purpose & Power Transistors BC337 Transistor (50V, 0.8A)
BC327 Transistor (45V, 0.8A)
BC327 Transistor (45V, 0.8A) 1 EGP
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BC548 Transistor (30V, 0.1A)
BC548 Transistor (30V, 0.1A) 1 EGP

BC337 Transistor (50V, 0.8A)

1 EGP

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Categories: General Purpose & Power Transistors, Transistors
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Description

Description

The BC337 is a very popular, general-purpose NPN bipolar junction transistor (BJT). It is the NPN complement to the BC327 and is widely used for medium-power switching and amplification tasks in hobbyist and professional electronics.

Key Specifications

  • Transistor Type: NPN

  • Maximum Collector Current ($I_C$): 800 mA

  • Collector-Emitter Voltage ($V_{CE}$): 50 V

  • Collector-Base Voltage ($V_{CB}$): 50 V

  • Package Type: TO-92

  • DC Current Gain ($h_{FE}$): 100 to 630 (divided into groups: -16, -25, -40)

  • Power Dissipation ($P_C$): 625 mW

Pinout Configuration

When looking at the flat side of the TO-92 package with the leads pointing down, the pins from left to right are:

  1. Collector

  2. Base

  3. Emitter

Comparison: BC327 vs. BC337

Because these two transistors are designed to be complements, they are frequently paired in “Push-Pull” amplifier configurations.

Feature BC327 BC337
Type PNP NPN
Max $V_{CE}$ 45 V 50 V
Max $I_C$ 800 mA 800 mA
Primary Logic Pull-up switching Pull-down switching

Usage Notes

  • NPN Switching: As an NPN transistor, the BC337 is “off” when the base is at ground potential. To turn it “on” (allowing current to flow from Collector to Emitter), you must apply a positive voltage (typically $>0.7\text{V}$) to the base relative to the emitter.

  • Saturation: To ensure the transistor acts as an efficient switch, ensure the base current ($I_B$) is sufficient to drive the transistor into saturation. A common rule of thumb is to set $I_B \approx \frac{I_C}{10}$.

  • Protection: When driving inductive loads (like small DC motors or relay coils), always place a flyback diode (such as a 1N4148 or 1N4007) in parallel with the load to protect the transistor from high-voltage spikes caused by the collapsing magnetic field.

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