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Home ELECTRONIC COMPONENTS Transistors N-Channel MOSFET Transistors IRF634 N-Channel MOSFET (250V, 8.1A)
IRF630N N-Channel MOSFET (200V, 9A)
IRF630N N-Channel MOSFET (200V, 9A) 20 EGP
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IRF540N N-Channel MOSFET (100V, 28A)
IRF540N N-Channel MOSFET (100V, 28A) 25 EGP

IRF634 N-Channel MOSFET (250V, 8.1A)

20 EGP

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Categories: N-Channel MOSFET Transistors, Transistors
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Description

Description

The IRF634 is a high-voltage N-Channel Power MOSFET designed for high-speed switching applications. It bridges the gap between low-voltage electronics and high-voltage power systems, providing a robust solution for systems requiring up to 250V blocking capability.

Key Specifications

  • Transistor Type: N-Channel MOSFET

  • Drain-Source Voltage ($V_{DS}$): 250 V

  • Continuous Drain Current ($I_D$): 8.1 A (at $25^{\circ}\text{C}$)

  • On-Resistance ($R_{DS(on)}$): $0.45 \ \Omega$ (Max)

  • Power Dissipation ($P_D$): 74 W

  • Package Type: TO-220

Pinout Configuration

When looking at the front of the TO-220 package (the metal tab is at the top) with the pins pointing down, the pins from left to right are:

  1. Gate (G)

  2. Drain (D)

  3. Source (S)

Comparison: IRF634 vs. IRF630N

While both are 200V+ N-Channel MOSFETs in the TO-220 package, the IRF634 is optimized for slightly higher voltage headroom.

Feature IRF634 IRF630N
Max $V_{DS}$ 250 V 200 V
Max $I_D$ 8.1 A 9 A
$R_{DS(on)}$ $0.45 \ \Omega$ $0.3 \ \Omega$
  • Selection Insight: You would choose the IRF634 specifically when your application rail voltage exceeds 200V (up to 250V), as the extra voltage margin is necessary to prevent breakdown.

Common Applications

  • Switching Power Supplies: Used in converters where input voltages reach up to 250V.

  • DC-DC Converters: Suitable for boost converters that step up lower voltages to higher levels.

  • Solenoid and Relay Drivers: Excellent for driving high-voltage DC coils that are common in industrial automation.

  • Motor Control: Used in moderate-power motor speed controllers for higher voltage DC motors.

Usage Best Practices

  • Gate Drive: To ensure the MOSFET fully transitions to its $0.45 \ \Omega$ state, use a gate-source voltage ($V_{GS}$) of 10V. Driving the gate with lower voltages (e.g., 3.3V or 5V logic) will result in high resistance, overheating, and potentially destroying the device.

  • Thermal Management: The device is rated for 74W total dissipation, but in a TO-220 package, you should aim to keep dissipation well below this limit. Always use a proper heatsink and thermal grease.

  • Transient Protection: Because the IRF634 is often used in high-voltage switching, inductive spikes are a constant threat. Place a snubber circuit or a TVS diode across the Drain and Source to suppress voltage spikes that could exceed the 250V rating.

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