Description
The IRFP250 is a high-performance N-Channel Power MOSFET designed for high-current applications. It is particularly popular in motor control, inverter designs, and power conversion systems where robust current handling is more critical than extremely high voltage.
Key Specifications
-
Transistor Type: N-Channel MOSFET
-
Drain-Source Voltage ($V_{DS}$): 200 V
-
Continuous Drain Current ($I_D$): 30 A (at $25^{\circ}\text{C}$)
-
On-Resistance ($R_{DS(on)}$): $0.075 \ \Omega$ (Max)
-
Power Dissipation ($P_D$): 214 W
-
Package Type: TO-247
Pinout Configuration
When looking at the front of the TO-247 package with the metal tab at the top and the pins pointing down, the pins from left to right are:
-
Gate (G)
-
Drain (D)
-
Source (S)
Comparison: IRFP250 vs. IRFP450/460
While all three share the TO-247 package, the IRFP250 is optimized for lower-voltage, higher-current applications, whereas the 400/500 series are optimized for higher voltage.
| Feature | IRFP250 | IRFP450 | IRFP460 |
| Max $V_{DS}$ | 200 V | 500 V | 500 V |
| Max $I_D$ | 30 A | 14 A | 20 A |
| $R_{DS(on)}$ | $0.075 \ \Omega$ | $0.4 \ \Omega$ | $0.27 \ \Omega$ |
-
Key Advantage: Because the $R_{DS(on)}$ is significantly lower ($0.075 \ \Omega$), the IRFP250 is more efficient and generates less heat when handling high currents at lower voltages compared to the higher-voltage MOSFETs.
Common Applications
-
DC Motor Control: Ideally suited for PWM motor drives where high current peaks are common.
-
Solar Inverters: Frequently used in the conversion stages where voltages are under 200V but current requirements are high.
-
Audio Power Amplifiers: Sometimes used in high-power Class D amplifier designs due to its fast switching and low resistance.
Usage Best Practices
-
-
Gate Drive: The IRFP250 has significant gate capacitance. To prevent the MOSFET from staying in the “linear region” too long (which creates heat), use a dedicated gate driver IC to provide a sharp, high-current pulse to the gate.
-
-
Thermal Design: With a dissipation rating of 214W, the IRFP250 requires a robust heatsink and proper thermal interface material (TIM) to prevent thermal runaway.
-
Snubbers: Even at 200V, inductive loads can cause voltage spikes that exceed the $V_{DS}$ limit. Implementing an R-C snubber network across the drain-to-source pins can help protect the device during high-speed switching.
Reviews
There are no reviews yet.