KM41256-12 256k x 1 Bit Dynamic RAM with Page/Nibble Mode Dip IC

Description

KM41256-12 256k x 1 Bit
Dynamic RAM
with Page/Nibble Mode Dip IC

The KM41256-12 is a 256K × 1-bit dynamic random-access memory (DRAM) offered in a DIP package. Designed for systems requiring compact, single-bit memory elements, it implements a multiplexed address scheme and standard RAS/CAS control signals to interface with microprocessor and memory-controller architectures. The device is optimized for simple board-level integration and provides straightforward refresh and timing control for dynamic storage.

This DRAM supports both page and nibble access modes to improve sequential read/write efficiency: page mode allows faster successive accesses within a row, while nibble mode permits small multi-bit transfers under controlled timing. Address and control timing are managed using row/column strobes (RAS/CAS), and the device uses standard dynamic refresh techniques to retain data.

Typical uses include microcomputer main memory expansion, buffer stores, and small dedicated memory arrays where single-bit wide DRAMs are aggregated for wider data buses. The DIP package simplifies prototyping and replacement. The
KM41256-12
’s behavior and electrical characteristics (timings, supply limits, and environmental ratings) are documented in the official datasheet.

Features:

256K × 1-bit dynamic RAM organization supporting multiplexed row/column addressing.

Support for Page Mode to speed sequential row accesses.

Support for Nibble Mode for small multi-bit bursts.

Standard RAS/CAS control interface for easy connection to microprocessor memory controllers.

DIP package for simple insertion and prototyping.

TTL-compatible control and data pins (as typical for this family).

Specifications:

Parameter

Symbol

Value

Units / Condition

General Specifications

Organization

—

256K x 1 bit

Supply Voltage

VCC

5.0 ± 10%

V

Ground

VSS

0

V

Refresh

Data Retention / Refresh

tREF

4

ms (for 256 cycles)

DC Characteristics

Output Leakage Current

IOL

-10 to +10

μA (Output Disabled)

Output High Voltage

VOH

≥ 2.4

V (I_OH = -5 mA)

Output Low Voltage

VOL

≤ 0.4

V (I_OL = 4.2 mA)

Capacitances

Input Capacitance (A₀–A₈, D)

C_IN1

≤ 7

pF

Input Capacitance (RAS, CAS, W)

C_IN2

≤ 10

pF

Output Capacitance (Q)

C_OUT

≤ 7

pF

Applications:

Microcomputer main memory.

Buffer memory for peripherals and controllers.

Small dedicated memory arrays in embedded systems.

Educational and prototyping use with DIP socketed boards.

Package Contents:

1x
KM41256-12 256k x 1 Bit Dynamic RAM with Page/Nibble Mode Dip IC

Datasheet